Optoelectronic circuit including heterojunction bipolar transist

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 82, 257 83, 257 84, H01S 319

Patent

active

055352316

ABSTRACT:
An optoelectronic integrated circuit furnishes a monolithic integration of high-speed transistors, lasers and photodetectors for optoelectronic communication applications. The monolithic device integrates an indium phosphorus (InP)/indium gallium arsenide (InGaAs) emitter-down heterojunction bipolar transistor with an InP/InGaAs quantum well laser and modulator, and a metal-semiconductor-metal photodetector.

REFERENCES:
patent: 5301202 (1994-04-01), Harder et al.
Eugene Hecht, Optics, Chapter 14, Sundry Topics from Contemporary Optics, .COPYRGT.1987, pp. 578-593 (no month available).
Ken Werner, Higher Visibility of LEDs, IEEE Spectrum, Jul. 1994, pp. 30-34.
C. Harder, P. Buchmann, and H. Meier, High-Power Ridge-Waveguide AlGaAs Grin-Sch Laser Diode, Electronics Letters, 25th Sep. 1986, vol. 22, No. 20.
Gen-Lin Tan, J. M. Xu, and Michael Shur, GaAs/AlGaAs Double-Heterojunction Lateral p-i-n Ridge Waveguide Laser, Optical Engineering, Sep. 1993, vol. 32, No. 9, pp. 2042-2045.
Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, Traverse Junction Stripe Laser With A Lateral Heterobarrier By Diffusion Enhanced Alloy Disordering, Aug. 4, 1986, pp. 835-837.
H. Namizaki, H. Kan, M. Ishii, and A. Ito, Transverse-Junction-Stripe-Geometry Double-Heterostructure Lasers With Very Low Threshold Current, Feb. 20, 1974, pp. 2785-2786.
Gen-Lin Tan, Naveen Bewtra, Keith Lee, and J. M. Xu, A Two-Dimensional Nonisothermal Finite Element Simulation of Laser Diodes; IEEE Journal of Quantum Electronics, vol. 29, No. 3, Mar., 1993, pp. 822-835.
Yongkun Sin, K. Y. Hsieh, J. H. Lee, and R. M. Kolbas, Surface And Bulk Leakage Currents In Transverse Junction Stripe Lasers, J. Appl. Phys. 69 (2), Jan. 15, 1991, pp. 1081-1090.
T. Ohtoshi, K. Yamaguchi, C. Nagaoka, T. Uda, Y. Murayama, and N. Chinone, A Two-Dimensional Device Simulator Of Semiconductor Lasers, Solid-State Electronics, vol. 30, No. 6, .COPYRGT.1987, pp. 627-638 (no month).
Masahiro Asada, Atsushi Kamey Ama and Yasuharu Suematsu, Gain And Intervalence Band Absorption In Quantum-Well Lasers, IEEE Journal of Quantum Electronics, vol. QE-20, No. 7, Jul. 7, 1984, pp. 745-753.
Akira Furuya, Masao Makiuchi, Osamu Wada, Toshio Fujii and Hiroyuki Nobuhara, AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering, Japanese Journal of Applied Physics, vol. 20, No. 2, Feb. 1987, pp. L134-L135.
O. Wada, A. Furuya, and M. Makiuchi, Planar, Compitable OEIC's Based On Multiquantum Well Structures; IEEE Photonics Technology Letters, vol. 1, No. 1, Jan. 1989, pp. 16 -18.
T. R. Chen, Katsuyuki Utaka, Yuhua Zhuang, Ya-Yun Liu, Amnon Yariv, A Vertical Monolithic Combination Of An InGaAsP/InP Laser And A Heterojunction Bipolar Transistor, IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 919-924.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optoelectronic circuit including heterojunction bipolar transist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optoelectronic circuit including heterojunction bipolar transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optoelectronic circuit including heterojunction bipolar transist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1874255

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.