Optimized tungsten contact plug process via use of furnace annea

Details Optimized tungsten contact plug process via use of furnace annea Optimized tungsten contact plug process via use of furnace annea

1995-10-27

1998-01-06

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438677, H01L 2144

Patent

active

057054428

ABSTRACT:
A process, to fill small diameter contact holes with tungsten, without deleterious attack of contact hole liner materials, during the tungsten deposition, has been developed. The process consists of using a titanium nitride barrier layer, overlying a titanium adhesive layer. However the barrier characteristics of titanium nitride are enhanced by subjecting this layer to an anneal cycle in an nitrogen ambient. The annealing produces a more robust barrier in terms of incorporating additional nitrogen into the deposited titanium nitride layer, as well as forming titanium nitride on any underlying titanium, that may be exposed due to defects in the deposited titanium nitride layer.

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patent: 5492863 (1996-02-01), Higgins, III
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patent: 5599736 (1997-02-01), Tseng
Wolf et al, "Silcion Processing For The VLSI Era", vol. 1:, Process Technology, Lattice Press pp. 303-308, 1986.

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