Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-04-22
2000-09-12
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 38, 216 79, 216 88, 438713, 438723, 438734, 438745, H01L 2100
Patent
active
061177814
ABSTRACT:
The reliability of in-laid metallization patterns, e.g., of copper or copper alloy, is significantly enhanced by voidlessly filling recesses in a substrate by an electroplating process, wherein "pinching-off" of the recess opening due to earlier formation of overhanging nucleation/seed layer deposits at the corners of the opening as a result of increased rates of deposition thereat is prevented. Embodiments include selectively tapering the width of the recess mouth opening to provide a wider opening at the substrate surface by means of a directed beam etching or ablation process while rotating the substrate, which tapered width profile effectively prevents formation of overhanging deposits thereat which can result in occlusion and void formation during filling of the recesses by electroplating.
REFERENCES:
patent: 4676869 (1987-06-01), Lee et al.
patent: 5209817 (1993-05-01), Ahmad et al.
Avanzino Steven C.
Lukanc Todd P.
Wang Fei
Advanced Micro Devices , Inc.
Powell William
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