Optimized phase change write method

Details Optimized phase change write method Optimized phase change write method

2007-03-23

2009-12-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000, C365S185250, C365S203000

Reexamination Certificate

active

07626860

ABSTRACT:
A method and system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC). The method and system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.

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