Optimized dry etching procedure, using an oxygen containing ambi

Details Optimized dry etching procedure, using an oxygen containing ambi Optimized dry etching procedure, using an oxygen containing ambi

1997-04-09

1998-12-29

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438301, 438305, 438307, 438 16, H01L 21302, H01L 21461

Patent

active

058541357

ABSTRACT:
An anisotropic RIE procedure for creating a small diameter SAC opening, in an insulator layer, used in the fabrication sequence of a MOSFET device, and using a large area test site for RIE end point monitoring, has been developed. The RIE procedure features a RIE ambient, including oxygen as part of the RIE ambient, resulting in equal amounts of polymer deposition on the small diameter SAC opening, as well as on the large area test sites, during the reactive ion etching of the small diameter, SAC opening. This allows accurate monitoring of the RIE procedure to be performed on the large area test site, using optical ellipsometry procedures.

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