Optimal operation of conformal silica deposition reactors

Details Optimal operation of conformal silica deposition reactors Optimal operation of conformal silica deposition reactors

2006-11-14

2006-11-14

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S909000, C438S935000, C438S781000, C438S789000, C438S790000, C438S907000, C257SE21545, C257SE21546

Reexamination Certificate

active

07135418

ABSTRACT:
Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-containing precursors. The methods may involve introducing multiple doses of the silicon-containing precursor for each dose of the metal-containing precursor and/or re-pressurizing the process chamber during exposure to a dose of the silicon-containing precursor. The methods of the present invention are particularly suitable for use in RVD processes.

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