Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2004-10-07
2008-12-09
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200
Reexamination Certificate
active
07462848
ABSTRACT:
A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.
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Berman Jack I.
Jaffer David H.
Multibeam Systems, Inc.
Pillsbury Winthrop Shaw & Pittman LLP
Smyth Andrew
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