Optically sensitive device and method

Details Optically sensitive device and method Optically sensitive device and method

1998-01-05

1999-03-23

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257458, H01L 31062, H01L 31113, H01L 31075, H01L 31105

Patent

active

058863745

ABSTRACT:
A process combines a high performance silicon pin diode (60) and other semiconductor devices such as transistors, resistors, and capacitors. The pin diode (60) is formed beneath an epitaxial layer (44) of the device at a depth that maximizes absorption of light having a wavelength greater than approximately 600 nanometers. Devices such as transistors are formed in the epitaxial layer (44). An integrated circuit has a substrate (41), an intrinsically doped layer (42), a buried layer (43), and an epitaxial layer (44). An isolation region (45) isolates an intrinsically doped region (46), a buried layer region (47), and the epitaxial layer region (48). The pin diode (32) has a substrate (41), an intrinsically doped region (46), and a buried layer region (47). A polysilicon region (62) provides a top side contact for the pin diode (60).

REFERENCES:
patent: 4926231 (1990-05-01), Hwang et al.
patent: 5304949 (1994-04-01), Chun
patent: 5355013 (1994-10-01), Parker
patent: 5401999 (1995-03-01), Bayraktaroglu

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