Optically eraseable nonvolatile semiconductor memory

Details Optically eraseable nonvolatile semiconductor memory Optically eraseable nonvolatile semiconductor memory

1989-06-05

1995-03-28

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257402, H01L 2968, H01L 2978

Patent

active

054019915

ABSTRACT:
A nonvolatile semiconductor memory is comprised of a semiconductor substrate composed of N-type silicon, a pair of source and drain regions having opposite electroconductivity to that of the semiconductor substrate and being formed in a surface region of the semiconductor substrate in spaced relation to each other to define therebetween a channel region, a gate insulating film formed on the channel region, a floating gate electrode formed on the gate insulating film over the channel region and composed of N-type polysilicon, and an insulating layer formed to cover the floating gate electrode. The floating gate electrode is composed of the N-type polysilicon effective to reduce the thickness of adjacent gate insulating film below 500 .ANG. to thereby significantly micronize the dimension of memory.

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patent: 4412129 (1983-10-01), Duncan
patent: 4472871 (1984-09-01), Green et al.
patent: 4513303 (1985-04-01), Abbas et al.
Grove, Physics & Technology of Semiconductor Devices, pp. 68-71, 1967.
Muller et al, Device Electronics for IC's, pp. 399-405, 1986.
Semiconductor Devices-Physics and Technology, S. M. Sze, 1985, pp. 400-401, 483-484.
Device Electronics for Integrated Circuits, R. Muller & T. Kamins, 1986 pp. 74, 85, 90-93, 452-453.
Semiconductors, H. Wolf, 1971, p. 365.

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