Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Ho, Tu-Tu V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S431000, C257S462000, C257SE51040, C257SE31053, C977S936000, C977S938000, C977S932000
Reexamination Certificate
active
11185153
ABSTRACT:
The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
REFERENCES:
patent: 6410205 (2002-06-01), Leichsenring et al.
patent: 6835394 (2004-12-01), Discher et al.
patent: 2004/0241900 (2004-12-01), Tsukamoto et al.
patent: 2006/0054922 (2006-03-01), Pettit
patent: 2 849 437 (2004-07-01), None
patent: WO 03/029354 (2003-04-01), None
Balasubramanian et al., “Photoelectronic transport imaging of individual semiconducting carbon nanotubes”,Applied Physics Letters AIP USA, vol. 84, No. 13, Mar. 29, 2004, pp. 2400-2402.
Kymakis et al., “Photovoltaic cells based on dye-sensitisation of single-wall carbon nanotubes in a polymer matrix”,Solar Energy Materials and Solar Cells, Elsevier Science Publishers, vol. 80, No. 4, Dec. 2003, pp. 465-472.
Shim et al., “Photoinduced conductivity changes in carbon nanotube transistors”,Applied Physics Letters, American Institute of Physics, vol. 83, No. 17, Oct. 2003, pp. 3564-3566.
Geens et al., “Field-Effect Mobility Measurements of Conjugated Polymer/Fullerene Photovoltaic Blends”,AIP Conference Proceedings, American Institute of Physics, vol. CP544, No. 544, Mar. 2000, pp. 516-520.
Borghetti Julien
Bourgoin Jean-Philippe
Derycke Vincent
Filoramo Arianna
Goffman Marcelo
Alston & Bird LLP
Commissariat a l''Energie Atomique
Ho Tu-Tu V.
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