Optical waveguide having a silicon oxi-nitride layer

Details Optical waveguide having a silicon oxi-nitride layer Optical waveguide having a silicon oxi-nitride layer

1984-11-26

1988-04-12

Sikes, William L.

350 9612, G02B 600

Patent

active

047370157

ABSTRACT:
An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.

REFERENCES:
patent: 3962062 (1976-06-01), Ingrey
patent: 4065730 (1977-12-01), Mindem
patent: 4319803 (1982-03-01), Burmeister et al.
patent: 4367916 (1983-01-01), Mottier et al.
patent: 4402720 (1983-09-01), Edahiro et al.
Brown et al., J. Electrochem. Soc., Mar. 1968, "Properties of Si.sub.x O.sub.y N.sub.z Films on Si," vol. 115, No. 3, pp. 311-317.
Rand et al., Applied Optics, 11(11), Nov. 1972, "Silicon Oxynitride Films on Fused Silica for Optical Waveguides," pp. 2482-2488.
Stutius et al., Applied Optics, 16(12), Dec. 1977, "Silicon Nitride Films on Silicon for Optical Waveguides," pp. 3218-3222.

Affiliated with

Also associated with

Rating

Optical waveguide having a silicon oxi-nitride layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical waveguide having a silicon oxi-nitride layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical waveguide having a silicon oxi-nitride layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1425731