Internal-combustion engines – Charge forming device – Including cylinder pressure or temperature responsive means
Reexamination Certificate
2004-12-22
2009-06-09
Cronin, Stephen K (Department: 3747)
Internal-combustion engines
Charge forming device
Including cylinder pressure or temperature responsive means
C257S184000
Reexamination Certificate
active
07543565
ABSTRACT:
Optical system for detecting the concentration of combustion products operating in situ and at high temperature based on measurement of the optical absorption of a gaseous mixture of combustion products through a photodetecting sensor based on gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN) and corresponding alloys. The operating temperature of the sensor preferably lies between 500° C. and 700° C., but the resistance of the active material permits use at even higher temperatures. This system can be used to measure the concentration of chemical species present in combustion products directly at their outlet, where the high operating temperature makes it possible to avoid fouling of the sensor caused by carbonaceous and non-carbonaceous deposits. The rate of response of the system is less than or equal to 1 millisecond and makes it possible to adjust the parameters of an associated combustion process control system in real time.
REFERENCES:
patent: 4614961 (1986-09-01), Khan et al.
patent: 4796590 (1989-01-01), Degobert et al.
patent: 5182670 (1993-01-01), Khan et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5979423 (1999-11-01), Poindexter et al.
patent: 7119359 (2006-10-01), Alfano et al.
Morkoc, H., “Potential applications of III-V nitride semiconductors”, Materials Science and Engineering, vol. 43, No. 1-3, pp. 137-146 (1994).
Morkoc, H., et al., “GaN-based modulation doped FETs and UV detectors”, Solid-State Electronics, vol. 46, No. 2, pp. 157-202 (Feb. 2002).
POTI, et al., “High responsivity GaN-based UV detectors”, Electronics Letters, vol. 39, No. 24, pp. 1747-1749 (Nov. 27, 2003).
Henini, M., “III-V nitrides for electronic and UV applications”, III Vs Review, vol. 12, No. 5, pp. 28, 30-32 (Sep. 1999).
Strite, S., et al., “Progress and prospects for GaN and the III-V nitride semiconductors”, Thin Solid Films, vol. 231, No. 1/2, pp. 197-210 (Aug. 25, 1993).
Strite, S., et al., “GaN, AIN, and InN: A Review”, Journal of Vacuum Science and Technology, vol. 10, No. 4, pp. 1237-1266 (Jul. 1992).
Scherer, A., et al., “InGaAsP photonic band gap crystal membrane microresonators”, Journal Of Vacuum Science & Technology, vol. 16, No. 6, pp. 3906-3910 (Nov. 1998).
Monroy, E., et al, “AIGaN-based UV photodetectors”, Journal of Crystal Growth, vol. 230, No. 3-4, pp. 537-543 (Sep. 2001).
De Vittorio, M., et al., “High temperature characterization of GaN-based photodetectors”, Sensors and Actuators, vol. 113, No. 3, pp. 329-333 (Jun. 9, 2004).
Cingolani Roberto
De Risi Arturo Antonio
De Vittorio Massimo
La Forgia Domenico
Lomascolo Mauro
Castro Arnold
Consiglio Nazionale Delle Ricerche - INFM
Cronin Stephen K
Sartori Michael A.
Venable LLP
LandOfFree
Optical system for detecting the concentration of combustion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical system for detecting the concentration of combustion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical system for detecting the concentration of combustion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4073345