Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-04-15
1999-08-10
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 14, 257 30, 257184, H01L 310304, H01L 3110, H01L 31105
Patent
active
059362588
ABSTRACT:
A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer.
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Horiguchi Naoto
Imamura Kenichi
Muto Shun-ichi
Nakata Yoshiaki
Sugiyama Yoshihiro
Fujitsu Limited
Jackson, Jr. Jerome
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