Integrated circuit and method

Details Integrated circuit and method Integrated circuit and method

1989-11-29

1994-09-13

Sotomayor, John B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257199, 257482, H01L 29161, H01L 2990

Patent

active

053471490

ABSTRACT:
Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit.

REFERENCES:
patent: 4062103 (1977-12-01), Yamagishi
patent: 4665413 (1987-05-01), Calviello
patent: 4745445 (1988-05-01), Mun et al.
Chu et al, IEEE 1987 Microwave & Millimeter-Wave Monolithic Circuits Symp., "Low Cost Millimeter Wave Monolithic Receivers", pp. 63-67.
Chi et al, "A 31-GHz Monolithic GaAs Mixer/Preamplifier Circuit for Receiver Applications", IEEE Transactions on Electron Dev., vol. ED-28, No. 2, Feb. 1981, pp. 149-154

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