Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

2005-03-29

2005-03-29

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S089000, C257S092000, C257S088000, C257S012000, C257S192000, C257S194000, C257S195000

Reexamination Certificate

active

06872966

ABSTRACT:
There are provided first and second optical waveguides formed on a semiconductor substrate and having upper clad layers and core layers that are separated mutually respectively, first and second phase modulation electrodes formed on the first and second optical waveguides respectively, and first and second slot-line electrodes formed on the semiconductor substrate on both sides of the first and second optical waveguides and connected to the first and second phase modulation electrodes via air-bridge wirings separately respectively.

REFERENCES:
patent: 5675673 (1997-10-01), Skeie
patent: 5815610 (1998-09-01), Tokano et al.
patent: 6122414 (2000-09-01), Shimizu
patent: 6334008 (2001-12-01), Nakabayashi
L. Mörl et al.; “A Travelling Wave Electrode Mach-Zehnder 40 Gb/s Demultiplexer Based on Strain Compensated GaInAs/AlInAs Tunnelling Barrier MQW Structure”;10thIntern. Conf. on Indium Phosphide and Related Materials WA3-4; May 11-15, 1998; pp. 403-406.

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