Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-03-22

2005-03-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S618000, C438S622000, C438S672000, C438S906000

Reexamination Certificate

active

06869810

ABSTRACT:
A manufacturing method of a semiconductor device, including the steps of forming a metal wire on a circuit formed on a semiconductor substrate, forming an insulating film on the metal wire, forming a via hole in the insulating film so as to expose a surface of the metal wire by selectively etching the insulating film by a plasma dry etching method, measuring a first level difference between the surface of the metal wire and the surface of the insulating film by a non-contact measurement method, removing the metal oxide film on the surface of the metal film by cleaning the surface of the metal film, measuring a second level difference between the surface of the metal film and the surface of the insulating film by a non-contact measurement method, and determining an amount of oxidation of the metal wire from a difference between the first and the second level differences.

REFERENCES:
patent: 5888906 (1999-03-01), Sandhu et al.
patent: 6020254 (2000-02-01), Taguwa
patent: 6313042 (2001-11-01), Cohen et al.
patent: 6503842 (2003-01-01), Sandhu et al.
patent: 2-124406 (1990-05-01), None

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