Optical proximity correction using progressively smoothed...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

07343582

ABSTRACT:
A method, program product and system is disclosed for performing optical proximity correction (OPC) wherein mask shapes are fragmented based on the effective image processing influence of neighboring shapes on the shape to be fragmented. Neighboring shapes are smoothed prior to determining their influence on the fragmentation of the shape of interest, where the amount of smoothing of a neighboring shape increases as the influence of the neighboring shape on the image process of the shape of interest decreases. A preferred embodiment includes the use of multiple regions of interactions (ROIs) around the shape of interest, and assigning a smoothing parameter to a given ROI that increases as the influence of shapes in that ROI decreases with respect to the shape to be fragmented. The invention provides for accurate OPC that is also efficient.

REFERENCES:
patent: 6857109 (2005-02-01), Lippincott
patent: 7043712 (2006-05-01), Mukherjee et al.
patent: 7260814 (2007-08-01), Rodin et al.
patent: 7261981 (2007-08-01), Lavin et al.
patent: 2005/0055658 (2005-03-01), Mukherjec et al.
patent: 2005/0153212 (2005-07-01), Lavin et al.
patent: 2005/0229131 (2005-10-01), Wu et al.
P.LaCour et al., “Model-Based OPC for Sub-Resolution Assist Feature Enhanced Layouts,” 2002 Proceedings of SPIE, vol. 4692, pp. 540-546.
Title: The Problem Of Optimal Placement Of Sub-Resolution Assist Features (SRAF) Author: Mukherjee, et al Optical Microlithography XVIII—Mar. 1-4, 2005, San Jose California SPIE—vol. 5754—Part three of Three Parts, no page #s.

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