Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-04-19
2005-04-19
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000, C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
06881523
ABSTRACT:
A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.
REFERENCES:
patent: 4902899 (1990-02-01), Lin et al.
patent: 5229255 (1993-07-01), White
patent: 5229872 (1993-07-01), Mumola
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5288569 (1994-02-01), Lin
patent: 5296891 (1994-03-01), Vogt et al.
patent: 5324600 (1994-06-01), Jinbo et al.
patent: 5362584 (1994-11-01), Brock et al.
patent: 5424154 (1995-06-01), Borodovsky
patent: 5436095 (1995-07-01), Mizuno et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5523193 (1996-06-01), Nelson
patent: 5538815 (1996-07-01), Oi et al.
patent: 5585210 (1996-12-01), Lee et al.
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5707765 (1998-01-01), Chen
patent: 5723233 (1998-03-01), Garza et al.
patent: 5821014 (1998-10-01), Chen et al.
patent: 5827623 (1998-10-01), Ishida et al.
patent: 5969441 (1999-10-01), Loopstra et al.
patent: 6114071 (2000-09-01), Chen et al.
patent: 6335130 (2002-01-01), Chen et al.
patent: 6421820 (2002-07-01), Mansfield et al.
patent: 0 770 926 (1997-05-01), None
patent: WO 9840791 (1998-09-01), None
ASML Masktools B.V.
Huff Mark F.
McDermott Will & Emery LLP
Sagar K.
LandOfFree
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