Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2008-07-15
2008-07-15
Young, Christopher G (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000, C430S396000
Reexamination Certificate
active
07399559
ABSTRACT:
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5229872 (1993-07-01), Mumola
patent: 5296891 (1994-03-01), Vogt et al.
patent: 5302477 (1994-04-01), Dao et al.
patent: 5523193 (1996-06-01), Nelson
patent: 5821014 (1998-10-01), Chen et al.
patent: 5827625 (1998-10-01), Lucas et al.
patent: 5969441 (1999-10-01), Loopstra et al.
patent: 6046792 (2000-04-01), Van Der Werf et al.
patent: 6482555 (2002-11-01), Chen et al.
patent: 6541167 (2003-04-01), Petersen et al.
patent: 6623895 (2003-09-01), Chen et al.
patent: 07-152144 (1995-06-01), None
patent: 09-127676 (1997-05-01), None
patent: 09-152708 (1997-06-01), None
patent: 10-326005 (1998-12-01), None
patent: 2000-214572 (2000-08-01), None
patent: WO 98/40791 (1998-09-01), None
patent: WO 99/34416 (1999-07-01), None
XP008018616, Schellenberg F. et al., “Optimization of Real Phase Mask Performance” 11th Annual Symposium on Photomask Technology, Sunnyvale, CA USA, Sep. 25-27, 1604.
XP000441752, Lin B. J., “Phase-Shifting Masks Gain an Edge”, IEEE Circuits and Devices Magazine, IEEE Inc. New York, US, vol. 9 No. 2, Mar. 1, 1993, pp. 28-35.
XP002245218, T. Terasawa, N. Hasegawa, T. Tanaka, S. Katagiri, “Improved Resolution of an I-Line Stepper Using a Phase-Shifting Mask”, J. Vac. Sci. Technol. B, vol. 8, No. 6, 1990.
Watanabe, H. et al., Transparent phase shifting mask, Electron Devices Meeting, 1990. Technical Digest., International. San Francisco, CA, USA, pp. 821-824, Dec. 1990.
Watanabe, H. et al., Sub-quarter-micron gate pattern fabrication using a transparent phase shifting mask, 1991, J. Vac. Sci. Technol. B, vol. 9, No. 6, pp. 3172-3175, Nov./Dec. 1991.
Levenson, Marc D., SCAA mask exposures and Phase Phirst design for 110nm and below, Proceedings of SPIE, vol. 4346 (2001), pp. 817-826.
Toh, Kenny K.H., et al., Optical Lithography with Chromeless Phase-Shifted Masks, SPIE vol. 1463, Optical/Laser Microlithography IV (1991), pp. 74-86.
Levenson, Marc D. et al., Improving Resolution in Photolighography with a Phase-Shifting Mask, IEEE Transactions on Electron Devices, vol. ED-29, No. 12, pp. 1828-1836, Dec. 1982.
Erdélyi, Miklós, Enhanced Microlithography Using Combined Phase Shifting and Off-axis Illumination, Jpn. J. Appl. Phys., vol. 34 (1995), Pt. 2, No. 12A, pp. 1629-1631.
Matsuo, Takahiro et al., Feasibility Study of an Embedded Transparent Phase-Shifting Mask in ArF Lithography, Optical Microlithography XIII, Proceedings of SPIE, vol. 4000 (2000), pp. 443-451.
Japanese Official Action dated Jul. 16, 2004 (Appln No. 2002-320524) and EPO Official Action dated Jul. 10, 2003 (Appln No. 02256694.7-1231-).
Schellenberg et al., “Optimization of Real Phase Mask Performance”, SPIE vol. 1604, 11th Annual BACUS symposium on Photomask Technology (1991), pp. 274-296.
Broeke Douglas Van Den
Chen J. Fung
ASML Masktools B.V.
Pillsbury Winthrop Shaw & Pittman LLP
Young Christopher G
LandOfFree
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