Optical proximity correction method for intermediate-pitch featu

Details Optical proximity correction method for intermediate-pitch featu Optical proximity correction method for intermediate-pitch featu

1997-02-28

1998-10-13

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 30, G03F 900

Patent

active

058210148

ABSTRACT:
A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5340700 (1994-08-01), Chen et al.

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