Optical proximity correction during wafer processing through sub

Details Optical proximity correction during wafer processing through sub Optical proximity correction during wafer processing through sub

1998-02-02

1999-01-12

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430311, 430325, 430326, G03F 900, G03C 500

Patent

active

058585915

ABSTRACT:
Improvement in the quality of photoresist images has been achieved. The data file in which the full description of the photoresist image, including Optical Proximity Corrections, has been stored is split into two subfiles. The split is made on the basis of separating cell descriptions (where the density of lines is high) from peripheral area descriptions (where lines tend to be isolated). A suitable bias in the form of a small increase or decrease (as appropriate) of all dimensions in the subfile is then applied. After the application of bias, the subfiles are merged back into a single data file and processing proceeds as usual.

REFERENCES:
patent: 5057462 (1991-10-01), Eisenberg et al.
patent: 5375157 (1994-12-01), Maehara
patent: 5432714 (1995-07-01), Chung et al.
patent: 5498579 (1996-03-01), Borodorsky et al.
patent: 5553273 (1996-09-01), Liebmann

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