Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-03
2007-04-03
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S523000, C257S414000, C257S428000, C257S431000, C257S443000, C257S499000, C257S506000
Reexamination Certificate
active
10915534
ABSTRACT:
An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated using a conductive semiconductor substrate as conventionally, it is not possible to drive the devices by a single power supply since the substrate side is shared as a common polarity by the devices. The present invention realizes a structure where both anode and cathode of each device can be isolated electrically by conventional process technology and provides an optical integrated circuit which can be driven by a single power supply.An optical integrated circuit is formed on a semi-insulative or insulative substrate. A high resistivity region which extends at least from the active layer to the substrate and includes part of an optical waveguide between the devices is formed so as to electrically isolate the anode and cathode of each integrated device from the other device.
REFERENCES:
patent: 6859479 (2005-02-01), Svenson
patent: 9-51142 (1995-08-01), None
patent: 2000-232252 (1999-02-01), None
Aoki Masahiro
Makino Shigeki
Shimizu Junichiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Flynn Nathan J.
Hitachi , Ltd.
Opnext Japan, Inc.
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