Optical metrology of structures formed on semiconductor...

Details Optical metrology of structures formed on semiconductor... Optical metrology of structures formed on semiconductor...

2009-03-05

2010-11-09

Holmes, Michael B. (Department: 2129)

Data processing: artificial intelligence

Machine learning

C706S020000, C706S022000, C438S016000

Reexamination Certificate

active

07831528

ABSTRACT:
A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured using a metrology device. A second diffraction signal is generated using a machine learning system, where the machine learning system receives as an input one or more parameters that characterize a profile of the structure to generate the second diffraction signal. The first and second diffraction signals are compared. When the first and second diffraction signals match within a matching criterion, a feature of the structure is determined based on the one or more parameters or the profile used by the machine learning system to generate the second diffraction signal.

REFERENCES:
patent: 6558965 (2003-05-01), Singh et al.
patent: 2003/0200063 (2003-10-01), Niu et al.
White, Multivariate Analysis of Spectral Measurements for the Characterization of Semiconductor Processes, Massachusetts Institute of Technology Aug. 31, 2001.

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