Optical integrated device manufacturing process

Details Optical integrated device manufacturing process Optical integrated device manufacturing process

2011-08-16

2011-08-16

Norton, Nadine G (Department: 1713)

Etching a substrate: processes

Forming or treating optical article

C216S002000, C216S011000, C216S041000, C438S057000

Reexamination Certificate

active

07998356

ABSTRACT:
The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.

REFERENCES:
patent: 5894538 (1999-04-01), Presby
Henry, et al. “Glass Waveguides on Silicon for Hybrid Optical Packaging”; Journal of Lightwave Technology; IEEE; Oct. 1989; pp. 1530-1539; vol. 7, No. 10; US.

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