Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-07-10
2010-10-05
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S024000, C216S026000, C216S074000
Reexamination Certificate
active
07807061
ABSTRACT:
A method of producing a structure by three-dimensionally processing a flat member includes a preparing, a first forming and a second forming. In the preparing, a substrate is prepared. In the first forming, an etching mask is formed on the substrate. The etching mask has at least two openings, and areas of the two openings are different from each other. In the second forming, at least a part of a three-dimension surface shape of the structure is formed on a surface of the substrate by a dry-etching on the substrate in accordance with the area of the opening of the etching mask.
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Office Action dated Feb. 17, 2010 from the German Patent Office in the corresponding German Application No. 10 2007 033 717.7-54 (and English Translation).
Bourouina, T. et al. “The MEMSNAS Process: Microloading Effect for Micromachining 3-D Structures of Nearly All Shapes.” Journal of Microelectromechanical Systems, vol. 13, No. 2, pp. 190-199, Apr. 2004.
Kanoh Kazuhiko
Wado Hiroyuki
DENSO CORPORATION
Posz Law Group , PLC
Tran Binh X
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