Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-03-20
1997-09-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 85, 257 13, H01L 2906
Patent
active
056635729
ABSTRACT:
An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.
REFERENCES:
patent: 5416338 (1995-05-01), Suzuki et al.
Matsushima Yuichi
Sakata Haruhisa
Utaka Katsuyuki
Bowers Courtney A.
Jackson Jerome
Kokusai Denshin Denwa Kabushiki Kaisha
Lobato Emmanuel J.
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