Optical emission spectroscopy end point detection in plasma etch

Details Optical emission spectroscopy end point detection in plasma etch Optical emission spectroscopy end point detection in plasma etch

1984-01-31

1985-01-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156657, 156345, 204192E, 356437, B44C 122, C03C 1500, C03C 2506

Patent

active

044937458

ABSTRACT:
A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.

REFERENCES:
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4328068 (1982-05-01), Curtis
Hirobe, et al., "End Point Detection in Plasma Etching by Optical Emission Spectroscopy", Journal of the Electrochemical Society, Jan. 1980, pp. 234-235.
Johnson, "Optical Methods Detect End Point in Plasma Etching", International Research and Development, Oct. 1980, pp. 181-186.

Affiliated with

Also associated with

Rating

Optical emission spectroscopy end point detection in plasma etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical emission spectroscopy end point detection in plasma etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical emission spectroscopy end point detection in plasma etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1480528