Optical dielectric thickness monitor for chemical-mechanical pol

Details Optical dielectric thickness monitor for chemical-mechanical pol Optical dielectric thickness monitor for chemical-mechanical pol

1996-07-29

1999-09-07

Breneman, Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

451287, B24B 4900

Patent

active

059482036

ABSTRACT:
An apparatus for chemical-mechanical-polishing(CMP) is described which employs a dedicated optical film thickness monitor for quasi in-situ assessment of the thickness of a dielectric film on an integrated circuit wafer during CMP operations involving planarization and polish-back. The wafers being polished remain mounted on the CMP wafer carrier and are transported from the polishing platen to the optical film thickness measuring device by an integral mechanical transport assembly which can be operated either manually or automatically by a computer. Real-time polishing rates are determined after each polish/measurement cycle so that time variant polishing rates are redressed.

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patent: 5664987 (1997-09-01), Renteln

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