Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-09-05
2006-09-05
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S069000, C359S344000
Reexamination Certificate
active
07101723
ABSTRACT:
After forming domain inverted layers3in an LiTaO3substrate1,an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer8is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
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Kato Makoto
Kitaoka Yasuo
Mizuuchi Kiminori
Yamamoto Kazuhisa
Jr. Carl Whitehead
RatnerPrestia
Rodgers Colleen E.
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