Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S084000, C257SE29255, C359S276000, C359S279000
Reexamination Certificate
active
07994549
ABSTRACT:
Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has ashape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
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Kim Gyungock
Kim Hyun-Soo
Mheen Bong-ki
Park Jeong-Woo
Electronics & Telecomunications Research Institute
Tran Tan N
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