Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2011-04-19
2011-04-19
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S016000, C257S027000, C257S450000, C257SE31109, C438S048000, C438S570000
Reexamination Certificate
active
07928442
ABSTRACT:
Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
REFERENCES:
patent: 6801676 (2004-10-01), Liu
patent: 2004/0178406 (2004-09-01), Chu
patent: 2005/0093021 (2005-05-01), Ouyang et al.
patent: 2005/0139930 (2005-06-01), Chidambarrao et al.
patent: 2005/0279992 (2005-12-01), Gupta et al.
patent: 2005/0285139 (2005-12-01), Forbes
patent: 09-260710 (1997-10-01), None
Ansheng Liu et al., “A high-speed silicon optical modulator based on a metal-oxide semiconductor capacitor,” pp. 615-618, Nature, vol. 427, Feb. 12, 2004.
Qianfan Xu et al., “Micrometre-scale silicon electro-optic modulator,” pp. 325-327, Nature, vol. 435, May 19, 2005.
International Search Report for application PCT/KR2007/003936 filed Aug. 17, 2007.
Written Opinion of the International Searching Authority for application PCT/KR2007/003936 filed Aug. 17, 2007
Kim Gyungock
Kim Hyun-Soo
Mheen Bong-ki
Park Jeong-Woo
Arora Ajay K
Electronics and Telecommunications Research Institute
LandOfFree
Optical device having strained buried channel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical device having strained buried channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical device having strained buried channel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2620729