Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-10-07
1990-06-05
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156613, 422108, 422245, 4272551, 118665, 118688, 118691, C30B 2516, C30B 2302, C30B 3500, B05C 1100
Patent
active
049311328
ABSTRACT:
A method and apparatus for epitaxial growth of precisely one monolayer. The growth is by organometallic chemical vapor deposition in which the substrate is alternately exposed to the anion and cation of a III-V compound. During deposition of the cation, for instance Ga or Al, reflectance difference spectroscopy is performed to obtain the difference of reflected light beams polarized in orthogonal directions. A growth of a monolayer and even of a partial monolayer can be monitored in real time.
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"Oscillations in the Optical Response of (001) GaAs and AlGaAs Surfaces During Crystal Growth by Molecular Beam Epitaxy", Applied Physics Letters, J. P. Harbison et al., 1988, vol. 52, pp. 2046-2048.
"Optical Reflectance Measurements of Transients During Molecular Beam Epitaxial Growth on (001) GaAs", Journal of Vacuum Science and Technology, J. P. Harbison et al., 1988, vol. B6, pp. 740-742.
"Application of Reflectance Difference Spectroscopy to Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. A6, pp. 1327-1332.
"Molecular-Beam Epitaxy Growth of Tilted GaAs/AlAs Superlattices by Deposition of Fractional Monolayer on Vicinal (001) Substrates", Journal of Vacuum Science and Technology, J. M. Gaines et al., 1988, vol. B6, pp. 1378-1331.
"GaAs/AsGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy'", Applied Physics Letters, S. P. Den Baars et al., 1987, vol. 51, No. 9, pp. 1530-1532.
"Perpendicular-Incidence Null Ellipsometry of Surfaces with Arbitrary Anisotropy", Optical Engineering, R. M. A. Azzam, 1981, vol. 20, pp. 58-61.
"Perpendicular-Incidence Ellipsometry (PIPE) of Surfaces with Arbitrary Anisotropy", Journal Optics (Paris), R. M. A. Azzam, 1981, vol. 12, pp. 317-321.
"Anisotropies in the Above-Band-Gap Optical Spectra of Cubic Semiconductors", Physical Review Letters, D. E. Aspnes et al., 1985, vol. 54, pp. 1956-1959.
"Above-Bandgap Optical Anisotropies in Cubic Semiconductors: A Visible-Near Ultraviolet Probe of Surfaces", Journal of Vacuum Science and Technology, D. E. Aspnes, 1985, vol. B3, pp. 1498-1506.
"Optical Reflectance and RHEED Transients During MBE Growth on (001) GaAs", Materials Research Society Symposium Proceedings, D. E. Aspnes et al., 10/9/87, vol. 91, pp. 57-62.
"Optical-Reflectance and Electron-Diffraction Studies of Molecular-Beam-Epitaxy Growth Transients on GaAs (001)", Physical Review Letters, D. E. Aspnes et al., 1987, vol. 59, pp. 1687-1690.
"Reflectance-Difference Spectroscopy System for Real-Time Measurements of Crystal Growth", Applied Physics Letters, D E. Aspnes et al., 1988, vol. 52, pp. 957-959.
"Optical Studies of Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. B6, pp. 1127-1131.
"Oscillations in the Optical Response of (001) GaAs and AlGaAs Surfaces During Crystal Growth by Molecular Beam Epitaxy", Applied Physics Letters, J. P. Harbison et al., 1988, vol. 52, pp. 2046-2048.
"Optical Reflectance Measurements of Transients During Molecular Beam Epitaxial Growth on (001) GaAs", Journal of Vacuum Science and Technology, J. P. Harbison et al., 1988, Vol. B6, pp. 740-742.
"Application of Reflectance Difference Spectroscopy to Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. A6, pp. 1327-1332.
"Molecular-Beam Epitaxy Growth of Tilted GaAs/AlAs Superlattices by Deposition of Fractional Monolayer on Vicinal (001) Substrates", Journal of Vacuum Science and Technology, J. M. Gaines et al., 1988, vol. B6, pp. 1378-1331.
Aspnes David E.
Bhat Rajaram
Colas Etienne G.
Florez Leigh T.
Harbison James P.
Bell Communications Research Inc.
Falk James W.
Guenzer Charles S.
Straub Gary P.
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