Optical: systems and elements – Optical amplifier – Particular active medium
Patent
1990-10-23
1993-03-23
Moskowitz, Nelson
Optical: systems and elements
Optical amplifier
Particular active medium
359345, 372 45, 257 79, 257431, H01S 302, H01S 318, G02B 110
Patent
active
051969580
ABSTRACT:
An optical amplifier with a semiconductor body comprising a layer structure grown on a substrate 1 with an active layer 4 situated between two cladding layers (2, 3) with a strip-shaped amplification region bounded by two end surfaces (7, 8) which form the input and output surfaces of the radiation to be amplified. The active layer comprises a number of quantum well (QW) layers 4A with direct band transition, which are separated by barrier layers 4B of a different semiconductor material. The material, the number, and the thickness of the QW layers 4A and the barrier layers 4B in combination with the length 1 of the amplification region are chosen in such a way that two optical transitions can take place in the active layer 4, maximum amplification occurring at a certain current density through the PN junction for the radiation wavelengths corresponding to these optical transitions, while the end surfaces (7, 8) are provided with an anti-reflection layer 9 which has a reflection coefficient R of at most 0.5% for these two wavelengths. An anti-reflection layer made up of four layers of alternately titanium oxide and aluminum oxide is advantageously used.
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Hendrix Leonardus J. M.
Van Es-Spiekman Wilma
Verbeek Bastiaan H.
Biren Steven
Moskowitz Nelson
U.S. Philips Corporation
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