Opposed field magnetoresistive memory sensing

Details Opposed field magnetoresistive memory sensing Opposed field magnetoresistive memory sensing

1990-04-04

1991-04-30

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365158, G11C 1115

Patent

active

050124447

ABSTRACT:
A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.

REFERENCES:
patent: 4731757 (1988-03-01), Daughton et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4829476 (1990-05-01), DuPuis et al.
patent: 4918655 (1990-04-01), Daughton

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