Operating method of one-time programmable read only memory

Details Operating method of one-time programmable read only memory Operating method of one-time programmable read only memory

2008-08-14

2010-02-16

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Read only systems

Semiconductive

C365S185240

Reexamination Certificate

active

07663904

ABSTRACT:
The present invention provides a method of operating a one-time programmable read only memory (OTPROM). The OTPROM includes at least a select transistor, an electrode and a dielectric layer disposed on a substrate, wherein the electrode is set up on the source region of the select transistor and the dielectric layer is set up between the electrode and the source region. The method of operating the one-time programmable read only memory includes performing a programming operation to write a digital data value of ‘1’ into the memory and performing a programming operation to write a digital data value of ‘0’ into the memory.

REFERENCES:
patent: 6404006 (2002-06-01), Li et al.
patent: 6985387 (2006-01-01), Chen et al.
patent: 7436028 (2008-10-01), Yang et al.

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