Operating method for a semiconductor component

Details Operating method for a semiconductor component Operating method for a semiconductor component

2005-06-14

2005-06-14

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S381000, C438S382000, C438S467000

Reexamination Certificate

active

06905892

ABSTRACT:
The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff1) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff2), which is less than the first differential resistance (Rdiff1).

REFERENCES:
patent: 5189387 (1993-02-01), Childers et al.
patent: 6258700 (2001-07-01), Bohr et al.
patent: 0196891 (1986-08-01), None
patent: 0930623 (1999-07-01), None

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