Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-08-15
2006-08-15
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C336S200000
Reexamination Certificate
active
07091575
ABSTRACT:
The invention includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. Embedding the stacked open pattern inductor in a magnetic oxide or in an insulator and a magnetic material increases the inductance of the inductor and allows the magnetic flux to be confined to the area of the inductor. A layer of magnetic material may be located above the inductor and below the inductor to confine electronic noise generated in the stacked open pattern inductor to the area occupied by the inductor. The stacked open pattern inductor may be fabricated using conventional integrated circuit manufacturing processes, and the inductor may be used in connection with computer systems.
REFERENCES:
patent: 3765082 (1973-10-01), Zyetz
patent: 3785046 (1974-01-01), Jennings
patent: 3812442 (1974-05-01), Muckelroy
patent: 4543553 (1985-09-01), Mandai et al.
patent: 4689594 (1987-08-01), Kawabata et al.
patent: 4959631 (1990-09-01), Hasegawa et al.
patent: 5032815 (1991-07-01), Kobayashi et al.
patent: 5070317 (1991-12-01), Bhagat
patent: 5122227 (1992-06-01), Ott
patent: 5227659 (1993-07-01), Hubbard
patent: 5302932 (1994-04-01), Person et al.
patent: 5349743 (1994-09-01), Grader et al.
patent: 5370766 (1994-12-01), Desaigoudar et al.
patent: 5387551 (1995-02-01), Mizoguchi et al.
patent: 5476728 (1995-12-01), Nakano et al.
patent: 5583474 (1996-12-01), Mizoguchi et al.
patent: 5643804 (1997-07-01), Arai et al.
patent: 5656101 (1997-08-01), Hayakawa et al.
patent: 5788854 (1998-08-01), Desaigoudar et al.
patent: 5801521 (1998-09-01), Mizoguchi et al.
patent: 6052790 (2000-04-01), Brown
patent: 6326314 (2001-12-01), Merrill et al.
patent: 6429632 (2002-08-01), Forbes et al.
patent: 6448879 (2002-09-01), Kitamura
patent: 6566731 (2003-05-01), Ahn et al.
patent: 6653196 (2003-11-01), Ahn et al.
patent: 09-246806 (1997-09-01), None
The Metals Handbook, Desk Edition, 2nd ed., ASM International: Materials Park, OH, 1998, pp. 642-643.
Zuffada, C. , et al., “Modeling Radiation with an Efficient Hybrid Finite-Element Integral-Equation Waveguide Mode-Matching Technique”,Antennas and Propagation, IEEE, 45 (1), (Jan. 1997),34-39.
Dhara, S.,et al. ,“Direct Deposit of highly coercive gamma iron oxide thin films for magnetic recording”,Journal of Applied Physics, 74(11), (Dec. 1993),pp. 7019-7021.
Dimitrov, D..V. ,et al. ,“Stoichiometry and Magnetic Properties of Iron Oxide Films”,Materials Research Society Symposium Proceedings, 494, (1998),pp. 89-94.
Domke, M..,et al. ,“Magnetic and electronic properties of thin iron oxide films”,Surface Science, 126, (Mar. 1983),pp. 727-732.
Fujii, E.,et al. ,“Low-temperature preparation and properties of spinel-type iron oxide films by ECR plasma-enhanced metalorganic chemical vapor deposition”,Japanese Journal of Applied Physics, 32(10B), (Oct. 1993),pp. 1527-1529.
Itoh, T..,et al. ,“Ferrite plating of Ba-containing iron oxide films using chelated highly alkaline (pH equals 11-13) aqueous solutions”,Japanese Journal of Applied Physics, 34(3), Mar. 1995),pp. 1534-1536.
Joshi, S..,et al. ,“Pulsed laser deposition of iron oxide and ferrite flms”,Journal of Applied Physics, 64 (10), Abstract—Fourth Joint Magnetism and Magnetic Materials—INTERMAG Conference Vancouver, BC,(Nov. 1988),pp. 5647-5649.
Kaito, C..,et al. ,“Structure of iron oxide films prepared by evaporating various iron oxide powders”,Applications of Surface Science, 22/23, North-Holland, Amsterdam,(1985),pp. 621-630.
Kim, Y J..,et al. ,“Surface Micromachined Solenoid Inductors for High Frequency Applications”,1997 International Symposium on Microelectronics, (1997), 1-6.
Li, J..L. ,et al. ,“Preparation of amorphous iron-containing and crystalline iron oxide films by glow discharge and their properties”,Material Science&Engineering, B7, (Sep. 1990),pp. 5-13.
Lin, J..K. ,et al. ,“Properties of RF Sputtered Iron Oxide Thin Films with CoCr and Nb as Dopants”,IEEE Transactions on Magnetics,vol. MAG-21, No. 5, (Sep. 1985), 1-3 p.
Macchesney, J..B. ,et al. ,“Chemical vapor deposition of iron oxide films for use as semitransparent masks”,Journal of the Electrochemical Society, 118(5), (May 1971),pp. 776-781.
Ouchi, H..,et al. ,“High rate deposition of iron-oxide thin films by reactive sputtering”,IEEE Transactions on Magnetics,vol. MAG-19, No. 5, (Sep. 1983),pp. 1980-1982.
Ouyang, M..,et al. ,“Structure and Magnetic Properties of Iron Oxide Films Deposited by Excimer Laser Ablation of a Metal-Containing Polymer”,Material Research Bulletin, 32(8), (1997),pp. 1099-1107.
Park, J..Y. ,et al. ,“Ferrite-Based Integrated Planar Inductor and Transformers Fabricated at Low Temperature”,IEEE Transactions on Magnetics, 33(5), (Sep. 1997),pp. 3322-3324.
Park, J..Y. ,et al. ,“Fully Integrated Micromachined Inductors with Electroplated Anisotropic Magnetic Cores”,Thirteenth Annual Applied Power Electronics Conference and Exposition,vol. 1, Conference Proceedings, Anaheim, California, (1998),379-385.
Shigematsu, T..,et al. ,“Magnetic properties of amorphous iron (III) oxide thin films”,Journal de Physique Colloque, International Conference on the Applications of the Mossbauer Effect, Kyoto, Japan,(Mar. 1979),pp. 153-154.
Zheng, Y..,et al. ,“Structure and Magnetic properties of sputtered iron oxide films”,Proceedings of the International Symposium on Physics of Magnetic Materials, (1987),pp. 146-149.
Amsterdam, (1985), pp. 621-630.
Ahn Kie Y.
Forbes Leonard
Doty Heather
Micro)n Technology, Inc.
Schillinger Laura M.
Schwegman Lundberg Woessner & Kluth P.A.
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