Open bit line memory devices and operational method

Details Open bit line memory devices and operational method Open bit line memory devices and operational method

1992-05-22

1994-04-12

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Noise suppression

365207, 365196, 36518901, G11C 1300

Patent

active

053031962

ABSTRACT:
An open bit line memory device and operational method are provided having performance characteristics commensurate with those of folded bit line architecture. The memory device includes a plurality of memory cells in open bit line configuration, at least some of which are interconnected by a bit line. A sense amplifier unit is coupled to the bit line for sensing a developing signal thereon during a predefined bit line signal development interval. The amplifier sets to one of two logical states during a subsequent setting interval. An electrical isolator is employed to decouple the bit line from the sense amplifier during the setting interval so that signal variations on the bit line do not effect the amplifier. Each bit line also has an associated reference voltage line, and the electrical isolator isolates both the bit line and the associated reference voltage line from the sense amplifier during amplifier's setting period.

REFERENCES:
patent: 4312047 (1982-01-01), Donoghue
patent: 4375600 (1983-03-01), Wu
patent: 4586171 (1986-04-01), Fujishima
patent: 4694428 (1981-09-01), Matsumura et al.
patent: 4701885 (1987-10-01), McElroy
patent: 4733374 (1988-03-01), Furuyama et al.
patent: 4804871 (1989-02-01), Walters, Jr.
patent: 4888732 (1989-12-01), Inoue et al.
patent: 4903344 (1990-02-01), Inoue
patent: 4918663 (1990-04-01), Remington et al.

Affiliated with

Also associated with

Rating

Open bit line memory devices and operational method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Open bit line memory devices and operational method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Open bit line memory devices and operational method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2104617