OPC edge correction based on a smoothed mask design

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Reexamination Certificate

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11012618

ABSTRACT:
A method and system is provided for performing edge correction on a mask design. Aspects of the invention include initially fragmenting boundaries of the mask design for optical proximity correction, whereby edge segments of the boundaries are moved by a distance value; interpreting the moved edge segments by defining a new endpoint for respective pairs of neighboring edge segments that meet at an angle, the endpoint being a location of where lines on which the edge segments lie intersect, wherein the new endpoint is used to create a smoothed feature, resulting in a smoothed OPC mask; calculating distances between all pairs of comparable edge segments of the smoothed OPC mask; comparing the distances to a design rule limit; for each edge segment having a distance that exceeds the design rule limit, decreasing the segment's distance value; and optimizing the mask design by repeating the above steps until no distance violations are found.

REFERENCES:
patent: 6857109 (2005-02-01), Lippincott
patent: 7073162 (2006-07-01), Cobb et al.
patent: 7080849 (2006-07-01), Lammer
patent: 2005/0097501 (2005-05-01), Cobb et al.

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