Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-12
2005-07-12
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C438S286000
Reexamination Certificate
active
06917073
ABSTRACT:
To reduce the disturbance between adjacent memory cells, an improved ONO flash memory array is implanted with a pocket on one side of the channel of each memory cell or two pockets of different concentrations on both sides of the channel, thereby resulting in memory cells with asymmetric pockets. Consequently, no disturbances occurred between adjacent memory cells when the ONO flash memory array is programmed or erased by band-to-band techniques, and the disturbances between adjacent memory cells are also suppressed during reading process.
REFERENCES:
patent: 5032881 (1991-07-01), Sardo et al.
patent: 6664588 (2003-12-01), Eitan
patent: 2003/0160280 (2003-08-01), Yoshino
Fan Tso-Hung
Liu Mu-Yi
Lu Tao-Cheng
Yeh Chih-Chieh
Macronix International Co. Ltd.
Prenty Mark V.
Rabin & Berdo P.C.
LandOfFree
ONO flash memory array for improving a disturbance between... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with ONO flash memory array for improving a disturbance between..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ONO flash memory array for improving a disturbance between... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3425986