Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-29
2005-11-29
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257S410000, C257S411000
Reexamination Certificate
active
06969886
ABSTRACT:
A SONOS flash memory device, including a semiconductor substrate; an ONO structure formed on the semiconductor substrate, the ONO structure including a bottom oxide layer, a dielectric charge storage layer and a top oxide layer, the bottom oxide layer having a super-stoichiometric oxygen content and an oxygen vacancy content of about 1010/cm2or less, wherein the bottom oxide layer exhibits a reduced charge leakage relative to a bottom oxide layer having a stoichiometric or sub-stoichiometric oxygen content and a greater number of oxygen vacancies. In one embodiment, the bottom oxide layer has an oxygen vacancy content of substantially zero.
REFERENCES:
patent: 4784975 (1988-11-01), Hoffmann et al.
patent: 6236064 (2001-05-01), Mase et al.
patent: 6281142 (2001-08-01), Basceri et al.
patent: 6337237 (2002-01-01), Basceri et al.
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6420192 (2002-07-01), Miki et al.
patent: 6436757 (2002-08-01), Kitamura
patent: 2001/0038881 (2001-11-01), Welsch et al.
patent: 2002/0084480 (2002-07-01), Basceri et al.
patent: 2002/0086476 (2002-07-01), Kim et al.
Lenahan et al.; “Radiation-Induced Leakage Currents: Atomic Scale Mechanisms”; IEEE Transactions on Nuclear Science; vol. 48, No. 6, Dec. 2001.
Halliyal Arvind
Jafarpour Amir H.
Kamal Tazrien
Kang Inkuk
Park Jae-yong
FASL LLC
Renner , Otto, Boisselle & Sklar, LLP
Tran Minh-Loan
LandOfFree
ONO fabrication process for reducing oxygen vacancy content... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with ONO fabrication process for reducing oxygen vacancy content..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ONO fabrication process for reducing oxygen vacancy content... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3490558