One-transistor type DRAM

Details One-transistor type DRAM One-transistor type DRAM

2008-01-02

2010-06-08

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Signals

C365S189080, C365S189150, C365S189060, C365S189090, C365S205000, C365S210100

Reexamination Certificate

active

07733718

ABSTRACT:
A one-transistor type DRAM including a floating body storage element connected between a bit line and a source line and controlled by a word line comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of clamp bit lines and reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a clamp cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, and a sense amplifier and a write driving unit connected to the bit line and configured to receive a clamp voltage and a reference voltage.

REFERENCES:
patent: 4388705 (1983-06-01), Sheppard
patent: 4745580 (1988-05-01), Laymoun et al.
patent: 6128219 (2000-10-01), Pio et al.
patent: 6236598 (2001-05-01), Chou
patent: 6836443 (2004-12-01), Dadashev
patent: 6853599 (2005-02-01), Oh et al.
patent: 6888770 (2005-05-01), Ikehashi
patent: 6982908 (2006-01-01), Cho
patent: 6999345 (2006-02-01), Park et al.
patent: 7027334 (2006-04-01), Ikehashi et al.
patent: 7050346 (2006-05-01), Maejima et al.
patent: 7196943 (2007-03-01), Mirichigni et al.
patent: 7251163 (2007-07-01), O
patent: 7301838 (2007-11-01), Waller et al.
patent: 7352645 (2008-04-01), Sforzin et al.
patent: 7486563 (2009-02-01), Waller et al.
patent: 7630262 (2009-12-01), Kang et al.
patent: 2009/0010079 (2009-01-01), Kang et al.
patent: 10-2006-0016936 (2007-05-01), None
patent: 100773349 (2007-10-01), None
patent: 100800156 (2008-01-01), None
Notice of Rejection for Korean Patent Application No. 10-2007-0067036, dated Jun. 18, 2008.
Notice of Allowance issued from Korean Intellectual Property Office on Sep. 1, 2009 with an English Translation.

Affiliated with

Also associated with

Rating

One-transistor type DRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One-transistor type DRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One-transistor type DRAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4187630