One-transistor type DRAM

Details One-transistor type DRAM One-transistor type DRAM

2011-01-04

2011-01-04

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S207000

Reexamination Certificate

active

07864611

ABSTRACT:
A one-transistor type DRAM includes a floating body storage element connected between a bit line and a source line and controlled by a word line. The DRAM comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element, formed in a region where the source line, the word line and the bit line are crossed and configured to output a reference current having a plurality of levels, a plurality of reference voltage generating units connected to the reference bit lines and configured to generate a plurality of reference voltages corresponding to the reference current having a plurality of levels, and a sense amplifier and a write driving unit connected to the bit line and configured to receive the plurality of reference voltages.

REFERENCES:
patent: 6888770 (2005-05-01), Ikehashi
patent: 7088629 (2006-08-01), Ohsawa
patent: 7301838 (2007-11-01), Waller et al.

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