One-transistor type DRAM

Details One-transistor type DRAM One-transistor type DRAM

2011-06-28

2011-06-28

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including specified plural element logic arrangement

C365S196000, C365S189060, C365S189090, C365S205000, C365S210100, C365S207000

Reexamination Certificate

active

07969794

ABSTRACT:
A one-transistor type DRAM including a floating body storage element connected between a bit line and a source line and controlled by a word line comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of clamp bit lines and reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a clamp cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, and a sense amplifier and a write driving unit connected to the bit line and configured to receive a clamp voltage and a reference voltage.

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