One transistor memory cell with programmable capacitance divider

Details One transistor memory cell with programmable capacitance divider One transistor memory cell with programmable capacitance divider

1989-01-03

1990-04-03

Heinz, A. J.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365154, 365117, G11C 1122, G11C 1124

Patent

active

049146270

ABSTRACT:
A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing them both up to VCC while impressing a voltage at the common node corresponding to data to be stored. Therefore, while one pole is held at VSS, the other pole is pulsed from VSS to VCC with the common node floating. A voltage develops at the common node which is above or below the midpoint between VSS and VCC, and will be indicative of the stored data. The capacitance divider is programmed in accordance with data. One such divider is added to a DRAM memory cell to form a shadow DRAM cell. Two such dividers are added to a static RAM memory cell to form a shadow static RAM cell. The same divider arrangement is operable in both volatile and non-volatile modes. An improvement arises by using PZT as dielectric in 54:46 mole ratio.

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