One-transistor fully static semiconductor memory cell

Details One-transistor fully static semiconductor memory cell One-transistor fully static semiconductor memory cell

1977-01-27

1979-02-27

Zazworsky, John

Static information storage and retrieval

Systems using particular element

Semiconductive

307279, 307304, 307238, 365182, 365186, H03K 3353, G11C 1134

Patent

active

041421116

ABSTRACT:
A cell for a semiconductor memory of the static type employs only one conventional MOS transistor, along with a field implanted resistance and a vertical P-channel junction-type field effect transistor. These elements, along with a resistor element which may be another field implanted resistance or a polysilicon implanted resistance, provide a circuit which is stable with either a "1" or "0" stored. No clock or other refresh circuitry is needed.

REFERENCES:
patent: 4000427 (1976-12-01), Hoffmann
K. Helwig, "Dynamic 4-Fet Storage Cell", IBM Technical Disclosure Bulletin, vol. 15, No. 7, Dec. 1972, pp. 2205-2206.

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