One time programmable EPROM fabrication in STI CMOS technology

Details One time programmable EPROM fabrication in STI CMOS technology One time programmable EPROM fabrication in STI CMOS technology

2008-07-22

2008-07-22

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29027, C257SE29136

Reexamination Certificate

active

11118642

ABSTRACT:
The formation of a one time programmable (OTP) transistor based electrically programmable read only memory (EPROM) cell (100) is disclosed. The cell (100) includes multiple concentric rings (108, 110) out of which gate structures are formed. An inner transistor based cell (130) formed from the inner ring (108) is shielded from isolation material (106) by one or more outer rings (110). The lack of overlap between the inner transistor and any isolation material promotes enhanced charge/data retention by mitigating high electric fields that may develop at such overlap regions (30, 32).

REFERENCES:
patent: 5400278 (1995-03-01), Kunori et al.
patent: 6639270 (2003-10-01), Dray
patent: 2002/0175353 (2002-11-01), Dray et al.

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