Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-22
2008-07-22
Landau, Matthew C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE29027, C257SE29136
Reexamination Certificate
active
07402874
ABSTRACT:
The formation of a one time programmable (OTP) transistor based electrically programmable read only memory (EPROM) cell (100) is disclosed. The cell (100) includes multiple concentric rings (108, 110) out of which gate structures are formed. An inner transistor based cell (130) formed from the inner ring (108) is shielded from isolation material (106) by one or more outer rings (110). The lack of overlap between the inner transistor and any isolation material promotes enhanced charge/data retention by mitigating high electric fields that may develop at such overlap regions (30, 32).
REFERENCES:
patent: 5400278 (1995-03-01), Kunori et al.
patent: 6639270 (2003-10-01), Dray
patent: 2002/0175353 (2002-11-01), Dray et al.
Brady III Wade J.
Landau Matthew C
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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