One-time-programmable anti-fuse formed using damascene process

Details One-time-programmable anti-fuse formed using damascene process One-time-programmable anti-fuse formed using damascene process

2011-06-28

2011-06-28

Arroyo, Teresa M (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S529000, C257SE23147, C257SE23149, C257S774000, C257S758000

Reexamination Certificate

active

07968967

ABSTRACT:
A semiconductor structure includes a semiconductor substrate, a power source, and a stacked structure over the semiconductor substrate and coupled to the power source. The stacked structure includes a bottom electrode, a top electrode, and an insulation layer between the top electrode and the bottom electrode, wherein the insulation layer has a breakdown voltage lower than a pre-determined write voltage provided by the power source and higher than a pre-determined read voltage provided by the power source.

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