Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2009-06-26
2011-11-08
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S009000, C438S781000, C438S782000, C257SE21007, C257SE21053, C257SE21077, C257SE21134, C257SE21218, C257SE21264
Reexamination Certificate
active
08053376
ABSTRACT:
In a method of making a polymer structure on a substrate a layer of a first polymer, having a horizontal top surface, is applied to a surface of the substrate. An area of the top surface of the polymer is manipulated to create an uneven feature that is plasma etched to remove a first portion from the layer of the first polymer thereby leaving the polymer structure extending therefrom. A light emitting structure includes a conductive substrate from which an elongated nanostructure of a first polymer extends. A second polymer coating is disposed about the nanostructure and includes a second polymer, which includes a material such that a band gap exists between the second polymer coating and the elongated nanostructure. A conductive material coats the second polymer coating. The light emitting structure emits light when a voltage is applied between the conductive substrate and the conductive coating.
REFERENCES:
patent: 5876487 (1999-03-01), Dahlgren et al.
patent: 6214095 (2001-04-01), Logan et al.
Liu Jin
Morber Jenny R.
Wang Xudong
Wang Zhong L.
Bockhop Bryan W.
Bockhop & Associates LLC
Georgia Tech Research Corporation
Nhu David
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